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LC1000 - LOW CAPACITANCE MNOS SERIES







PART NO. CAPACITANCE
(pF) 		 DIE SIZE
(axb) mill2		 BREAKDOWN
VOLTAGE (V) 		 LEAKAGE (A) 
LC1000-0.350 0.350 10x10 100V (min) 10nA (max)
LC1000-0.300 0.300 10x10 100V (min) 10nA (max)
LC1000-0.250 0.250 10x10 100V (min) 10nA (max)
LC1000-0.200 0.200 10x10 100V (min) 10nA (max)
LC1000-0.180 0.180 10x10 100V (min) 10nA (max)

    SPECIAL NOTES:
    The microwave capacitors are manufactured on high conductivity silicon substrates. The dielectrics are SiO2 and Si3N4 and the capacitors are available with single or dual dielectric. The die thickness is 0.005" ± 0.001". The top plate of the capacitors is 99.99% electroplated or sputtered gold with a TiW barrier that withstands half hour at 400 deg. C without loss of adhesion. Minimum 1.5 micrometers of Au enhance the top plate bondability.
    The backside of the die is metalized with Ti/Pt/Au, which is compatible with most die attaching methods. The MNOS type of capacitors has low voltage coefficients, low TCC, high Q and high dielectric breakdown. Capacitors are 100% visually inspected and packaged in waffle packs, gel packs or vials.

    NOTES:

  1. Operating temperature: -55°C to +200°C
  2. Temperature Coefficient: £ 200 PPM/° C. (20PPM Typical)
  3. Dielectric: Silicon Dioxide/Silicon Nitride
  4. Equivalent Series Res.: < 0.05 ohms @ 18GHz
  5. Insulation Resistance: 1012 ohms typical
  6. Thermal Conductivity: 1.2° C/cm/W
  7. Capacitance Range: 0.080 pF to 0.350 pF
  8. Finish & Workmanship: to MIL-S-883, Level B


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