Silicon Chip Capacitors MIS MOS MNOS CXXXX - Series of chip capacitors are designed to be used as RF bypass, DC blocks coupling filter elements and microwave circuit resonant elements. When used as resonant elements in oscillators, Q has to be as high as possible while the temperature coefficient has to be as small as possible. U. S. MICROWAVES advanced semiconductor and thin film technologies allow for an important reduction of the series resistance DCR that is increasing the SRF of the capacitor. High quality dielectrics with low loss factors translate into an increased Q. The microwave capacitors are manufactured on high conductivity silicon substrates. The dielectrics are SiO2 and Si3N4 and the capacitors are available with single or dual dielectric. The die thickness is 0.005 +/- 0.001. The top plate of the capacitors is 99.99% electroplated or sputtered gold with a TiW barrier that withstands half hour at 400 deg. C without loss of adhesion. Minimum 1.5 micrometers of Au enhance the top plate bond ability. The backside of the die is metalized with Ti/Pt/Au, which is compatible with most die attaching methods. The MNOS type of capacitors has low voltage coefficients, low TCC, high Q and high dielectric breakdown. Capacitors are 100% visually inspected and packaged in waffle packs, gel packs or vials. US MICROWAVESmanunufacturer of high reliability microwave integrated circuits MIC technology. US Microwave offers a multitude of applied thin film products and microwave semiconductor devices: manufactures and supplies high quality standard microwave thin film circuits and microwave devices using advanced technical ceramics and semiconductor materials; Products include RF micro devices for hybrid chip and wire applications; microwave thin film circuits, custom manufacturing from customer's data, spiral chip inductors - ceramic, sapphire and quartz substrate, thin film resistors - ceramic, silicon and quartz substrates, multi-tap thin film resistors - ceramic and silicon substrates, capacitors MIS for chip and wire applications, MNOS capacitors, MOS capacitors, ceramic capacitors, Schottky diodes, PIN diodes, tunnel diodes, SRD diodes, varactor diodes and zero bias diodes, RF NPN and PNP transistors, high speed LDMOS and T MOSFET s, MMIC - RF IC s silicon and SiGe. SEMICONIX Designs and manufactures standard and custom bipolar and MOS analog devices, semiconductors, analog integrated circuits, discrete components for high performance systems such as cellular/wireless, video amplifiers, heart pacemakers and medical imaging systems. Standard semiconductor components are designed and manufactured for space, medical, telecommunications and military applications only. Company's technology road map is including SiGe epi devices for high speed RF bipolars and high speed fiber optic and optoelectronic applications. Analog devices, ASIC analog design and manufacturing: Semiconix produces a series of semi-custom bipolar analog devices in arrays that are customized by designing a specific metal interconnection mask. The arrays contain a large number of undedicated active and passive components, i.e. transistors, diodes, resistors, capacitors, MOSFET s, LDMOS, photodiodes, phototransistors, etc. Since wafers are stocked before the metal mask, the custom IC development phase is shorter and far less expensive compared to conventional full custom ICs. Customers may provide own analog design. Optoelectronic components: photodiodes, photodiodes arrays, phototransistors, position sensing devices, optocouplers, optoisolators, photodarlington, high voltage phototransistors output, Schottky infrared detectors. Discrete semiconductors: Schottky diodes, Zenner diodes, TVS, small signal bipolar transistors, high voltage bipolar transistors, matched pair bipolar transistors, small signal JFET s and MOSFETs, MCT (MOS controlled tyristors), IGBT. Semiconix 's Divisions:HTE Labs Provides Wafer Foundry, R&D support and Specialty Wafer Fab Processing to customers from semiconductors and microelectronics industry. Wafer foundry includes the following processes: 20V, 45V, 75V, 25V super-beta and high voltage dielectric isolated bipolar process. R&D support is provided in the following fields of microelectronics: thin film active and passive components technologies, flip chip technology (TiW/Cu/Cu/SnPb), sensor technologies (inertial, pressure, temperature, gas and smoke detectors), optoelectronic technologies and components, discrete and integrated circuits technology development for special applications, LiNbO3 applications like SAW, Ti diffused, light wave guides and Mach-Zender light modulators. Specialty wafer fab processing: epitaxy, SiGe, epi, diffusion and oxidation, ion implant, LPCVD and PECVD Si3N4, SiO2, platinum silicidation, photo-lithography, plasma etching, silicon micro-machining by KOH anisotropic etch, sputter depositions of Ti/Ni/Ag lift off process, Ti/Pt/Au lift off process, sputter depositions of thin film resistors : SiCr, NiCr, TaN2, silicon wafers back grind and polish followed by trimetal backside sputter depositions, gold backside sputter depositions and alloy : gold electroplating and gold bump. SEMICONWELL designs and manufacture standard and custom Integrated Passive Networks - IPN for the personal computer, telecommunications, industrial controls, automotive, avionics. The Integrated Passive Networks are a sum of resistors, capacitors, inductors, diodes and schottky diodes and are available in through hole and surface mounted packages. SEMICONWELL is suppling integrated termination, filters and ESD protection for use in mobile phones, PDAs, personal computers, notebooks, routers, hubs, internet appliances. Standard Devices - Most standard devices include resistors, capacitors, inductors, diodes and schottky diodes networks and are inventoried by the designated part numbers and can be ordered on line, from factory or from distributors. Custom Devices - Custom IPN (Integrated Passive Networks) are manufactured from customer's prints upon request. US MICROWAVES develops, manufactures and supplies high quality standard microwave thin film circuits and microwave devices including RF bipolars for hybrid chip and wire applications as follows: microwave thin film circuits, custom manufacturing from customer's data, spiral chip inductors - ceramic, sapphire and quartz substrate, thin film resistors - ceramic, silicon and quartz substrates, multi-tap thin film resistors - ceramic and silicon substrates, capacitors MIS for chip and wire applications, MNOS capacitors, MOS capacitors, ceramic capacitors, Schottky,PIN, tunnel, SRD, varactor and zero bias diodes, RF NPN and PNP transistors, high speed LDMOS and T MOSFET s, MMIC - RF IC s silicon and SiGe.

 


US MICROWAVES
Advanced Microwave Components
CUSTOM MODELS MIS CHIP CAPACITORS
 
USM C35M32T14-102 CUSTOM MODEL 25V MIS CHIP CAPACITORS USMC35M32T14-1000pF
USM C42M40T14-222 CUSTOM MODEL 15V MIS CHIP CAPACITORS USMC42M40T14-2200pF
USM C40M39T14-222 CUSTOM MODEL 15V MIS CHIP CAPACITORS USMC40M39T14-2200pF
USM C24M16T05-330 CUSTOM MODEL 100V MIS CHIP CAPACITORS USMC24M16T05-33pF
USM C28M20T05-101 CUSTOM MODEL 100V MIS CHIP CAPACITORS USMC28M20T05-100pF
USM C4249T14-102 CUSTOM MODEL 28V MIS CHIP CAPACITORS USMC4249T14-1000pF
USM C4538T14-102 CUSTOM MODEL 28V MIS CHIP CAPACITORS USMC4538T14-1000pF
USM C6056T14-222 CUSTOM MODEL 28V MIS CHIP CAPACITORS USMC6056T14-2200pF
USM RFC13899-102 CUSTOM MODEL 25V MIS CHIP CAPACITORS USMC13899-1000pF
 
 
   
 
MIS chip capacitors are designed to be used in chip and wire hybrid circuits as RF bypass, DC blocks coupling filter elements and microwave circuit resonant elements. When used as resonant elements in oscillators, Q has to be as high as possible while the temperature coefficient has to be as small as possible.
U. S. MICROWAVES advanced semiconductor and thin film technologies allow for an important reduction of series resistance DCR, increased SRF, low insertion loss and skin effect at higher microwave frequencies. High quality dielectrics with low loss factors translate into an increased Q, very high insulation resistance, high breakdown voltage, long term stability under bias at high temperatures. US Microwaves MIS chip capacitors exhibit Q values in excess of 3000 in X band, insertion loss less than 0.08dB through Ku band and series resistance much lower than conventional ceramic chip capacitors. DCR of less than 0.1 ohms is typical for most chip sizes. MIS capacitors with silicon nitride/silicon oxide dielectric, also known as MNOS capacitors exhibit high stability, low temperature coefficients, low leakage in nA range and high BV from 25, 50 and 100 to 300V. MIS Chip capacitors are available in a wide range of die sizes, capacitance values and breakdown voltages.

HOME PRODUCT TREE Last updated: June 30, 2009

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