LOW VOLTAGE AUDIO POWER AMPLIFIER USM LM386 FEATURES APPLICATIONS LOW VOLTAGE AUDIO POWER AMPLIFIER Battery operation In DIE form, this device is an excellent selection for many chip and wire HYBRID CIRCUITS. Minimum external parts Wide supply voltage range: 4V-12V or 5V-18V; Low quiescent current drain: 4mA Voltage gains from 20 to 200 Ground referenced input Self-centering output quiescent voltage Low distortion: 0.2% (AV=20, VS=6V, RL= 8Ohm, PO=125mW, f=1kHz). PRODUCT DESCRIPTION AND SHORT APPLICATION NOTE The USM LM386 is power amplifier designed for use in low voltage consumer applications. The gain is internally set to 20 to keep external part count low, but the addition of external resistor and capacitor between pins 1 and 8 will increase the gain to any value from 20 to 200. The inputs are ground referenced while the output automatically biases to one-half the supply voltage. The quiescent power drain is 24 milliwatts when operating from a volt supply, making the USM386 ideal for battery operation. IC SCHEMATIC DIAGRAM MAXIMUM RATINGS PARAMETER SYMBOL VALUE UNITS Supply Voltage VS 15 V Power Dissipation Pd 0.66 W Input Voltage VIN 0.4 V Storage Temperature Tstg -65 to +150 C Operating Temperature Topr 0 to +70 C Junction Temperature Tj +150 C ONLY Proper die handling equipment and procedures should be employed. Stresses beyond listed absolute maximum ratings may cause permanent damage to the device. ELECTRICAL CHARACTERISTIC PARAMETER TEST CONDITIONS SYMBOL MIN TYP MAX UNITS Operating Supply Voltage VS 4 12 V Quiescent Current VS=6V, VIN=0 IQ 4 mA Output Power VS=6V, RL=8W, THD=10% POUT 250 325 mV Voltage Gain Pins 1and 8 Open 10 F from Pin 1to 8 AV 26 46 dB dB Bandwidth VS=6V, Pins 1and 8 Open BW 300 KHz Total Harmonic Distortion VS=6V, RL= 8W, POUT=125mW f=1kHz, Pins 1and 8 Open THD 0.2 % Power Supply Rejection Ratio VS=6V, f=1kHz, CBYPASS=10 F Pins 1and 8 Open, Referred to Output PSSR 50 dB Input Resistance RIN 50 kW Input Bias Current VS=6V, Pins 2 and 3 Open IBAS 250 nA (NOTE 1)All voltages are measured with respect to the ground pin, unless otherwise specified (NOTE 2)Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is functional, but do not guarantee specific performance limits. Electrical Characteristics state DC and AC electrical specifications under particular test conditions which guarantee specific performance limits. This assumes that the device is within the Operating Ratings. Specifications are not guaranteed for parameters where no limit is given, however, the typical value is a good indication of device performance. (NOTE 3)For operation in ambient temperatures above 25deg.C, the device must be derated based on a 150deg.C maximum junction temperature. GENERAL DIE INFORMATION Substrate Thickness (mils) Die size (mils) [mm] Bonding pads(mils) Backside metal Silicon 101 (55.118x62.992)[1.4x1.6] 3.543x3.543 Backside of the die is coated with 0.5m GOLD , which makes it compatible with AuSi or AuGe die attach. All US Microwaves products are available in die form. Typical delivery for die products is 2-3 weeks ARO. For Custom designs, delivery is 3-4 weeks ARO. Certain items may be available from stock. Inventory is periodically updated. All devices for chip and wire applications are 100% tested, visual inspected and shipped in waffle packs (WP). For high volume automated assembly, MIS chip capacitors are supplied as 4" wafers 100% tested, inked and diced on expanded film frame (FF). TECHNOLOGY DESCRIPTION: SEMICONDUCTOR-MANUFACTURING These integrated Circuits are manufactured with medium voltage junction isolated bipolar process. junction isolated bipolar processes allow integration of high performance NPN, PNP and JFET transistors, MOS capacitors, diffused resistors and precision thin film resistors. The bond pad metallization is standard 1m Aluminium. The backside of the die is coated with 0.5m GOLD , which makes it compatible with AuSi or AuGe die attach. DIE LAYOUT - MECHANICAL SPECIFICATIONS PAD # FUNCTION X(mils) X(mm) Y(mils) Y(mm) 1 GAIN 4.724 0.120 38.386 0.975 2 -INPUT 4.724 0.120 26.181 0.666 3 +INPUT 4.724 0.120 3.937 0.100 4A GND 21.654 0.550 3.937 0.100 4B GND 23.622 0.600 15.354 0.390 5 VOUT 23.622 0.600 39.961 1.015 6 VCC 29.528 0.750 55.315 1.405 7 BYPASS 17.323 0.440 55.315 1.405 8 GAIN 4.724 0.120 55.315 1.405 USM PART # MINIMUM ORDER QUANTITY Waffle Packs U/P($) USMLM386 100pc -WP $3.20 List prices are for standard products, available from stock. List prices for other quantities and tolerances are available on line through Instant Quote. For standard products available from stock, there is a minimum line item order. For custom products please inquire by contacting US Microwaves technical sales. No rights can be derived from pricing information provided on this website. Such information is indicative only, is showed for budgetary use only and subject to change by US MICROWAVES at any time and without notice. Products sold for space, military or medical applications, element evaluation and/or level K or S qualification are subject to minimum order levels to be established on a case by case basis. For any special applications, die level KGD qualification requirements, different packaging or custom configurations, contact sales department. ORDERING: Order on line at: http://www.usmicrowaves.com/porder.htm. A copy of the order along with an order confirmation receipt is issued instantly for all orders placed on line. On line Orders have to be verified, accepted and acknowledged by US Microwaves sales department in writing before, becoming non cancelable binding contracts. DELIVERY: Typical delivery for die products packaged in waffle packs is 2-4 weeks ARO. For Custom designs, delivery is 3-5 weeks ARO. Certain items may be available from stock with delivery up to 1 week. SHIPPING/PACKAGING: All devices for chip and wire applications are 100% tested, visual inspected and shipped in waffle packs (WP). SAMPLES: Samples are available only for customers that have issued firm orders pending qualification of product in a particular application. GUARANTEED SUPPLY! US Microwaves guarantees continuous supply and availability of all standard products provided minimum order quantities are met. U.S. Microwaves has made every effort to have this information as accurate as possible. However, no responsibility is assumed by U.S. Microwaves for its use, nor for any infringements of rights of third parties which may result from its use. U.S. Microwaves reserves the right to revise the content or modify its product line without prior notice. U.S. Microwaves products are not authorized for and should not be used within support systems which are intended for surgical implants into the body, to support or sustain life, in aircraft, space equipment, submarine, or nuclear facility applications without the specific written consent of U.S. Microwaves.

 
 
US MICROWAVES
Advanced Microwave Components
  LOW VOLTAGE AUDIO POWER AMPLIFIER
USM LM386
 
 

FEATURES
APPLICATIONS
LOW VOLTAGE AUDIO POWER AMPLIFIER
Battery operation
Minimum external parts
Wide supply voltage range: 4V-12V or 5V-18V;
Low quiescent current drain: 4mA
Voltage gains from 20 to 200
Ground referenced input
Self-centering output quiescent voltage
Low distortion: 0.2% (AV=20, VS=6V, RL= 8Ohm, PO=125mW, f=1kHz).
In DIE form, this device is an excellent selection for many chip and wire HYBRID CIRCUITS.

PRODUCT DESCRIPTION AND SHORT APPLICATION NOTE
The USM LM386 is power amplifier designed for use in low voltage consumer applications. The gain is internally set to 20 to keep external part count low, but the addition of external resistor and capacitor between pins 1 and 8 will increase the gain to any value from 20 to 200. The inputs are ground referenced while the output automatically biases to one-half the supply voltage. The quiescent power drain is 24 milliwatts when operating from a volt supply, making the USM386 ideal for battery operation.


IC SCHEMATIC DIAGRAM

MAXIMUM RATINGS
PARAMETER SYMBOL VALUE UNITS
Supply Voltage VS 15 V
Power Dissipation Pd 0.66 W
Input Voltage VIN ±0.4 V
Storage Temperature Tstg -65 to +150 °C
Operating Temperature Topr 0 to +70 °C
Junction Temperature Tj +150 °C
ONLY Proper die handling equipment and procedures should be employed. Stresses beyond listed absolute maximum ratings may cause permanent damage to the device.

ELECTRICAL CHARACTERISTIC
PARAMETER TEST CONDITIONS SYMBOL MIN TYP MAX UNITS
Operating Supply Voltage VS 4 12 V
Quiescent Current VS=6V, VIN=0 IQ 4 mA
Output Power VS=6V, RL=8W, THD=10% POUT 250 325 mV
Voltage Gain Pins 1and 8 Open 10
µF from Pin 1to 8
AV   26
46
  dB
dB
Bandwidth VS=6V, Pins 1and 8 Open BW   300   KHz
Total Harmonic Distortion VS=6V, RL= 8W, POUT=125mW
f=1kHz, Pins 1and 8 Open
THD   0.2   %
Power Supply Rejection Ratio VS=6V, f=1kHz, CBYPASS=10 µF
Pins 1and 8 Open, Referred to Output
PSSR   50   dB
Input Resistance   RIN   50   kW
Input Bias Current VS=6V, Pins 2 and 3 Open IBAS   250   nA
 
(NOTE 1)All voltages are measured with respect to the ground pin, unless otherwise specified
(NOTE 2)Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is functional, but do not guarantee specific performance limits. Electrical Characteristics state DC and AC electrical specifications under particular test conditions which guarantee specific performance limits. This assumes that the device is within the Operating Ratings. Specifications are not guaranteed for parameters where no limit is given, however, the typical value is a good indication of device performance.
(NOTE 3)For operation in ambient temperatures above 25deg.C, the device must be derated based on a 150deg.C maximum junction temperature.

GENERAL DIE INFORMATION
Substrate Thickness (mils) Die size (mils) [mm] Bonding pads Backside metal
Silicon 10±1 (55.118x62.992)[1.4x1.6] 3.543x3.543 Backside of the die is coated with 0.5m GOLD , which makes it compatible with AuSi or AuGe die attach.
All US Microwaves products are available in die form. Typical delivery for die products is 2-3 weeks ARO. For Custom designs, delivery is 3-4 weeks ARO. Certain items may be available from stock. Inventory is periodically updated. All devices for chip and wire applications are 100% tested, visual inspected and shipped in waffle packs (WP). For high volume automated assembly, MIS chip capacitors are supplied as 4" wafers 100% tested, inked and diced on expanded film frame (FF).

TECHNOLOGY DESCRIPTION: SEMICONDUCTOR-MANUFACTURING
These integrated Circuits are manufactured with medium voltage junction isolated bipolar process. junction isolated bipolar processes allow integration of high performance NPN, PNP and JFET transistors, MOS capacitors, diffused resistors and precision thin film resistors. The bond pad metallization is standard 1m Aluminium. The backside of the die is coated with 0.5m GOLD , which makes it compatible with AuSi or AuGe die attach.
All US Microwaves products are manufactured using GOLDCHIP TECHNOLOGY™ a trade mark of Semiconix Corporation.

DIE LAYOUT - MECHANICAL SPECIFICATIONS
PAD # FUNCTION X(mils) X(mm) Y(mils) Y(mm)
1 GAIN 4.724 0.120 38.386 0.975
2 -INPUT 4.724 0.120 26.181 0.666
3 +INPUT 4.724 0.120 3.937 0.100
4A GND 21.654 0.550 3.937 0.100
4B GND 23.622 0.600 15.354 0.390
5 VOUT 23.622 0.600 39.961 1.015
6 VCC 29.528 0.750 55.315 1.405
7 BYPASS 17.323 0.440 55.315 1.405
8 GAIN 4.724 0.120 55.315 1.405
 

STANDARD PRODUCTS ORDERING INFORMATION

STANDARD PRODUCTS PRICE LIST
USM PART # MINIMUM ORDER QUANTITY Waffle Packs U/P($)
USMLM386 100pc -WP $3.20
List prices are for standard products, available from stock. List prices for other quantities and tolerances are available on line through Instant Quote. For standard products available from stock, there is a minimum line item order. For custom products please inquire by contacting US Microwaves technical sales. No rights can be derived from pricing information provided on this website. Such information is indicative only, is showed for budgetary use only and subject to change by US MICROWAVES at any time and without notice.
Products sold for space, military or medical applications, element evaluation and/or level K or S qualification are subject to minimum order levels to be established on a case by case basis. For any special applications, die level KGD qualification requirements, different packaging or custom configurations, contact sales department.

INSTANT QUOTE
US Microwaves P/N Quantity E-mail    
 

ORDERING: Order on line at: http://www.usmicrowaves.com/porder.htm. A copy of the order along with an order confirmation receipt is issued instantly for all orders placed on line. On line Orders have to be verified, accepted and acknowledged by US Microwaves sales department in writing before, becoming non cancelable binding contracts.
DELIVERY: Typical delivery for die products packaged in waffle packs is 2-4 weeks ARO. For Custom designs, delivery is 3-5 weeks ARO. Certain items may be available from stock with delivery up to 1 week.
SHIPPING/PACKAGING: All devices for chip and wire applications are 100% tested, visual inspected and shipped in waffle packs (WP).
SAMPLES: Samples are available only for customers that have issued firm orders pending qualification of product in a particular application.

GUARANTEED SUPPLY! US Microwaves guarantees continuous supply and availability of all standard products provided minimum order quantities are met.

U.S. Microwaves has made every effort to have this information as accurate as possible. However, no responsibility is assumed by U.S. Microwaves for its use, nor for any infringements of rights of third parties which may result from its use. U.S. Microwaves reserves the right to revise the content or modify its product line without prior notice. U.S. Microwaves products are not authorized for and should not be used within support systems which are intended for surgical implants into the body, to support or sustain life, in aircraft, space equipment, submarine, or nuclear facility applications without the specific written consent of U.S. Microwaves.

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