1.079W, 109GHz, MICROWAVE ALUMINUM NITRIDE THIN FILM CHIP RESISTORS USM RG1025AN FEATURES More power dissipation than Al2O3 version while working up to 200GHz range frequencies Low insertion loss High reliability and ruggedness Small chip size with reduced stray capacitance per unit area. Low temperature coefficient and wide operating temperature range. APPLICATIONS Applications of this series of chip resistors include microwave and RF high power terminations, resistive microwave power dividers, Wilkinson power dividers , power attenuators, microwave power amplifiers. PRODUCT DESCRIPTION AND SHORT APPLICATION NOTE USM RG1025AN-XXXW-YYYGHz chip resistors are designed to be used in chip and wire hybrid circuits as microwave and RF resistors, terminations, Wilkinson power dividers, attenuators, microwave amplifiers, for biasing of active components and as feedback resistors for high speed transimpedance amplifiers for optical communication receivers, etc. To attain very low capacitance to ground, these chip resistors are manufactured on 10 mils ALN ceramic substrates and do not have backside metallization. These series of chip resistors and terminations have low temperature coefficients, low noise and increased long term stability compared to their thick film counterpart (see app note 110 /appnotes/thin_film_resistors_versus_thick_film_resistors_how_they_compare_usm_app_note110.htm). TECHNOLOGY DESCRIPTION: SEMICONDUCTOR-THIN FILM MANUFACTURING All thin film microwave products are manufactured using advanced semiconductors and thin film technologies including ultra-stable and self passivating Tantalum Nitride resistors, gold interconnect metallization and reliable MNOS capacitors to achieve excellent uniformity, performance and reliability. Thin film technology is the preferred solution for all applications that require low noise, long term stability and excellent performance at very high frequencies. US Microwaves employs proprietary thin film technologies for deposition of a wide range of resistive films with sheet resistance films from 1W/sq to 10,000W/sq. All US Microwaves products are available in die form and are ideal for high reliability hybrid and multi chip module applications. ELECTRICAL CHARACTERISTICS Resistance range 1 to 1E6 ohms Maxim Power 1.079 W Maxim Capacitance 0.029 pF 3dB frequency (defined for selected 50 ohms resistance) 109 GHz Temperature Coefficient -55°C to 150°C 100 ppm/°C Tolerances available 1% Operating Temperature range -65 to 200 °C Working voltage (Vw) 7.34 V Peak voltage at 25C, 5 sec 11.01 V Insulation resistance at 25°C 10E9 ohms ONLY Proper die handling equipment and procedures should be employed. Stresses beyond listed absolute maximum ratings may cause permanent damage to the device. GENERAL DIE INFORMATION Substrate Aluminum Nitride AlN Thickness (mils) 10±1 Die size (mils) 25 x 10 ± 2 Bonding pads min 4x4 mils, 3Ám thick, 99.99% electroplated gold with a TiW barrier Backside metal Backside of the die is NOT metallized for RG series. All US Microwaves products are available in die form. Typical delivery for die products is 2-3 weeks ARO. For Custom designs, delivery is 3-4 weeks ARO. Certain items may be available from stock. Inventory is periodically updated. All devices for chip and wire applications are 100% tested, visual inspected and shipped in waffle packs (WP).

 
 
US MICROWAVES
Advanced Microwave Components
  1.079W, 109GHz, MICROWAVE ALUMINUM NITRIDE THIN FILM CHIP RESISTORS
USM RG1025AN- 1.079W- 109GHz
 
 

FEATURES
APPLICATIONS
CHIP RESISTOR
More power dissipation than Al2O3 version while working up to 109GHz range frequencies
Low insertion loss
High reliability and ruggedness
Small chip size with reduced stray capacitance per unit area.
Low temperature coefficient and wide operating temperature range.
Applications of this series of chip resistors include microwave and RF high power terminations, resistive microwave power dividers, Wilkinson power dividers , power attenuators, microwave power amplifiers.

PRODUCT DESCRIPTION AND SHORT APPLICATION NOTE
USM RG1025AN-XXXW-XXXGHz chip resistors are designed to be used in chip and wire hybrid circuits as microwave and RF resistors, terminations, Wilkinson power dividers, attenuators, microwave amplifiers, for biasing of active components and as feedback resistors for high speed transimpedance amplifiers for optical communication receivers, etc.
To attain very low capacitance to ground, these chip resistors are manufactured on 10 mils ALN ceramic substrates and do not have backside metallization.
These series of chip resistors and terminations have low temperature coefficients, low noise and increased long term stability compared to their thick film counterpart (see app note 110).

TECHNOLOGY DESCRIPTION: SEMICONDUCTOR-THIN FILM MANUFACTURING
All thin film microwave products are manufactured using advanced semiconductors and thin film technologies including ultra-stable and self passivating Tantalum Nitride resistors, gold interconnect metallization and reliable MNOS capacitors to achieve excellent uniformity, performance and reliability. Thin film technology is the preferred solution for all applications that require low noise, long term stability and excellent performance at very high frequencies. US Microwaves employs proprietary thin film technologies for deposition of a wide range of resistive films with sheet resistance films from 1W/sq to 10,000W/sq. All US Microwaves products are available in die form and are ideal for high reliability hybrid and multi chip module applications.
All US Microwaves products are manufactured using GOLDCHIP TECHNOLOGY™ a trade mark of Semiconix Corporation.


ELECTRICAL CHARACTERISTICS
PARAMETER VALUE UNITS
Resistance range 1 to 1E6 W
Maxim Power 1.079 W
Maxim Capacitance 0.029 pF
3dB frequency (defined for selected 50 W resistance) 109 GHz
Temperature Coefficient -55°C to 150°C 100 ppm/deg C
Tolerances available 1, 5 %
Operating Temperature range -65 to 200 °C
Working voltage (Vw) 7.34 V
Peak voltage at 25C, 5 sec 11.01 V
Insulation resistance at 25 C 10E9 W
     

ONLY Proper die handling equipment and procedures should be employed. Stresses beyond listed absolute maximum ratings may cause permanent damage to the device.


GENERAL DIE INFORMATION
Substrate Thickness (mils) Die size (mils) Bonding pads Backside metal
Aluminum Nitride
AlN
10 ±1 10 x 25 ±2 min 4x4 mils, 3µm thick, 99.99% electroplated gold with a TiW barrier Backside of the die is NOT metallized for RG series.
All US Microwaves products are available in die form. Typical delivery for die products is 2-3 weeks ARO. For Custom designs, delivery is 3-4 weeks ARO. Certain items may be available from stock. Inventory is periodically updated. All devices for chip and wire applications are 100% tested, visual inspected and shipped in waffle packs (WP).

DIE LAYOUT - MECHANICAL SPECIFICATIONS
 

STANDARD PRODUCTS ORDERING INFORMATION

R [W] R multiplier TOLERANCE max VOLTAGE [V] max F @3dB [GHz]
Find part #

STANDARD PRODUCTS PRICE LIST
USM PART # MINIM ORDER QUANTITY Waffle Packs U/P($)
USM RG1025AN-XXXW-YYYGHz-50-1%   -WP  
List prices are for standard products, available from stock. List prices for other quantities and tolerances are available on line through Instant Quote. For standard products available from stock, there is a minimum line item order. For custom products please inquire by contacting US Microwaves technical sales. No rights can be derived from pricing information provided on this website. Such information is indicative only, is showed for budgetary use only and subject to change by US MICROWAVES at any time and without notice.
Products sold for space, military or medical applications, element evaluation and/or level K or S qualification are subject to minimum order levels to be established on a case by case basis. For any special applications, die level KGD qualification requirements, different packaging or custom configurations, contact sales department.

INSTANT QUOTE
US Microwaves P/N Quantity E-mail    
 

ORDERING: Order on line at: http://www.usmicrowaves.com/porder.htm. A copy of the order along with an order confirmation receipt is issued instantly for all orders placed on line. On line Orders have to be verified, accepted and acknowledged by US Microwaves sales department in writing before, becoming non cancelable binding contracts.
DELIVERY: Typical delivery for die products packaged in waffle packs is 2-4 weeks ARO. For Custom designs, delivery is 3-5 weeks ARO. Certain items may be available from stock with delivery up to 1 week.
SHIPPING/PACKAGING: All devices for chip and wire applications are 100% tested, visual inspected and shipped in waffle packs (WP). For larger orders,>10k pc, devices can be shipped on film frame. For smaller quantities, it may vary. For high volume automated assembly, devices may be supplied as 4" wafers 100% tested, inked and diced on expanded film frame (FF).
SAMPLES: Samples are available only for customers that have issued firm orders pending qualification of product in a particular application.

GUARANTEED SUPPLY! US Microwaves guarantees continuous supply and availability of all standard products provided minimum order quantities are met.

U.S. Microwaves has made every effort to have this information as accurate as possible. However, no responsibility is assumed by U.S. Microwaves for its use, nor for any infringements of rights of third parties which may result from its use. U.S. Microwaves reserves the right to revise the content or modify its product line without prior notice. U.S. Microwaves products are not authorized for and should not be used within support systems which are intended for surgical implants into the body, to support or sustain life, in aircraft, space equipment, submarine, or nuclear facility applications without the specific written consent of U.S. Microwaves.

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Last updated: July 01, 2009
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