FLIP CHIP RESISTORS - MICROWAVE THIN FILM CHIP RESISTORS  for f >20GHz APPLICATIONS -20GHz - thin film resistors for microwave and transimpedance amplifiers for optical communication receivers RG2000-xx-FC The RG2000-xx-FC series of microwave thin film chip resistors is designed to be used in microwave hybrid circuits for biasing of active components and as feedback resistors for high speed  transimpedance amplifiers for optical communication receivers. To attain very low capacitance to ground, these chip resistors are manufactured on 10 mils Al2O3ceramic substrates and do not have backside metallization. In addition of the regular RG2000-xx  series, RG2000-xx-FC has a protective dielectric coating that prevents shorting due to the conductive epoxy.These devices are specifically designed and manufactured to be compatible with flip chip conductive epoxy mounting. These devices can be used over the full military temperature range -55C to +125C. Quality and workmanship is per MIL-S-883. Devices are 100% tested, visual inspected and packaged in waffle packs. US Microwaves employs proprietary thin film technologies for deposition of a wide range of sheet resistance films from 1W/sq to 10,000 W/sq.Custom lab kits are available: RG Lab kit.The resistive material is high stability Tantalum Nitride with low temperature coefficient of resistance, <75ppm/°C typical. For Rsq<10W/sq and Rsq>500W/sq, the resistive material is proprietary.The bonding pads of the resistors are 3m m thick, 99.99% electroplated gold with a TiW barrier that withstands 30 min at 400C in air without loss of adhesion. The backside of the die is NOT metallized. Standard TiW/Au or other custom metallizations are available upon special request.
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FLIP CHIP RESISTORS - MICROWAVE THIN FILM CHIP RESISTORS
FOR f >20GHz APPLICATIONS

20GHz - thin film resistors for microwave and transimpedance amplifiers for optical communication receivers RG2000-FC

The RG2000-FC series of microwave thin film chip resistors is designed to be used in microwave hybrid circuits for biasing of active components and as feedback resistors for high speed  transimpedance amplifiers for optical communication receivers. To attain very low capacitance to ground, these chip resistors are manufactured on 10 mils Al2O3ceramic substrates and do not have backside metallization. In addition of the regular RG2000-xx  series, RG2000-xx-FC has a protective dielectric coating that prevents shorting due to the conductive epoxy.

These devices are specifically designed and manufactured to be compatible with flip chip conductive epoxy mounting. These devices can be used over the full military temperature range -55C to +125C. Quality and workmanship is per MIL-S-883. Devices are 100% tested, visual inspected and packaged in waffle packs. US Microwaves employs proprietary thin film technologies for deposition of a wide range of sheet resistance films from 1W/sq to 10,000 W/sq.


R=0.1 to 3.5 sq
Custom lab kits are available: RG Lab kit

R(W) USM Part # R(W) USM Part # R(W) USM Part #
1.0 RG2000-1P0-FC 10 RG2000-10P0-FC 100 RG2000-100P0-FC
1.2 RG2000-1P2-FC 12 RG2000-12P0-FC 120 RG2000-120P0-FC
1.5 RG2000-1P5-FC 15 RG2000-15P0-FC 150 RG2000-150P0-FC
1.8 RG2000-1P8-FC 18 RG2000-18P0-FC 180 RG2000-180P0-FC
2.2 RG2000-2P2-FC 22 RG2000-22P0-FC 220 RG2000-220P0-FC
2.7 RG2000-2P7-FC 27 RG2000-27P0-FC 270 RG2000-270P0-FC
3.3 RG2000-3P3-FC 33 RG2000-33P0-FC 330 RG2000-330P0-FC
3.9 RG2000-3P9-FC 39 RG2000-39P0-FC 390 RG2000-390P0-FC
4.7 RG2000-4P7-FC 47 RG2000-47P0-FC 470 RG2000-470P0-FC
5.0 RG2000-5P0-FC 50 RG2000-50P0-FC 500 RG2000-500P0-FC
5.6 RG2000-5P6-FC 56 RG2000-56P0-FC 560 RG2000-560P0-FC
6.8 RG2000-6P8-FC 68 RG2000-68P0-FC 680 RG2000-680P0-FC
7.5 RG2000-7P5-FC 75 RG2000-75P0-FC 750 RG2000-750P0-FC
8.2 RG2000-8P2-FC 82 RG2000-82P0-FC 820 RG2000-820P0-FC

SUBSTRATE INFORMATION RESISTOR SPECIFICATIONS
Material Thickness
(mils)
Die size
(mils)
Power rating
(mW@70°C)
Tolerances
(
q%)
Capacitance
(pF)
RC constant (sec)
(R=1k
W)
Al2O3, 99.6% 10±1 (20±2)x(20±2) 122 1, 5, 10 0.022 2.2E-11

PROCESS INFORMATION
Resistor Conductor Backside metallization
The resistive material is high stability Tantalum Nitride with low temperature coefficient of resistance, <75ppm/°C typical. For Rsq<10W/sq and Rsq>500W/sq, the resistive material is proprietary. The bonding pads of the resistors are 3m m thick, 99.99% electroplated gold with a TiW barrier that withstands 30 min at 400C in air without loss of adhesion. The backside of the die is NOT metallized. Standard TiW/Au or other custom metallizations are available upon special request.

ORDERING INFORMATION RG2000-xxPx-FC-q%

TOLERANCE q MINIMUM ORDER/line item U/P($) >1K U/P($) >5K U/P($) >10K U/P($) >50K U/P($) >100K DELIVERY
10% $320 / 300 pc 0.77 0.66 0.60 0.54 0.38 3-4 weeks ARO for 5% and 10% tolerance. Certain items are available from Stock
5% $320 / 200 pc 1.13 0.99 0.92 0.83 0.57
1% Not available for Flip Chip version - - - - -

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