Microwave power resistors, Beryllium Oxide BeO power chip resistors, 1P5W, 1P5 watts, 112GHz 3dB frequency, 50x25 mils USM RP050025BO2W microwave power chip resistors; US Microwaves

1.W, 112GHz, Beryllium Oxide BeO POWER CHIP RESISTORS USM RP050025BO2W-1W-112GHz FEATURES High power dissipation while working up to 10GHz range frequencies Low insertion loss High reliability and ruggedness Small chip size with reduced stray capacitance per unit area. Low temperature coefficient and wide operating temperature range. APPLICATIONS Applications of Power chip resistors include microwave and RF high power terminations, resistive microwave power dividers, Wilkinson power dividers , power attenuators, microwave power amplifiers. PRODUCT DESCRIPTION AND SHORT APPLICATION NOTE USM RPLLLWWWAO-1P5W-112GHz flange less power chip resistors are designed to be used in chip and wire hybrid circuits as microwave and RF power resistors, power terminations, Wilkinson power dividers, power attenuators, microwave power amplifiers, etc. Flange less thin film power chip resistors and terminations have low temperature coefficients, low noise and increased long term stability compared to their thick film counterpart (see app note 110). In high power applications, temperature coefficient of resistance and long term stability have to be the best available. Suggestions on how to mount and use flange less power chip resistors are available in app note 111. TECHNOLOGY DESCRIPTION: SEMICONDUCTOR-THIN FILM MANUFACTURING All thin film microwave products are manufactured using advanced semiconductors and thin film technologies including ultra-stable and self passivating Tantalum Nitride resistors, gold interconnect metallization and reliable MNOS capacitors to achieve excellent uniformity, performance and reliability. Thin film technology is the preferred solution for all applications that require low noise, long term stability and excellent performance at very high frequencies. US Microwaves employs proprietary thin film technologies for deposition of a wide range of resistive films with sheet resistance films from 1W/sq to 10,000W/sq. All US Microwaves products are available in die form and are ideal for high reliability hybrid and multi chip module applications. ELECTRICAL CHARACTERISTICS Resistance range 10-100 W Maxim Power 1.5W Maxim Capacitance 0.028pF 3dB frequency (defined for 50 W resistance) 112 GHz Temperature Coefficient -55C to 150C 100 ppm/deg C Tolerances available 1 % Operating Temperature range -65 to 200 deg C Working voltage (Vw) SQR(P*R) V Peak voltage at 25C, 5 sec 1.5 x (Vw) V Insulation resistance at 25 C 10E9 W ONLY Proper die handling equipment and procedures should be employed. Stresses beyond listed absolute maximum ratings may cause permanent damage to the device. GENERAL DIE INFORMATION Substrate Beryllium Oxide BeO , Thickness (mils) 40±3,Die size (mils) LLL x WWW ±2 Bonding pads min 4x4 mils, 3µm thick, 99.99% electroplated gold with a TiW barrier, Backside metal Backside of the die is metallized with standard Ti/Pt/Au compatible with Au-Sn, Au-Ge or silver filled conductive epoxy. Custom metallization is available for special orders. All US Microwaves products are available in die form. Typical delivery for die products is 2-3 weeks ARO. For Custom designs, delivery is 3-4 weeks ARO. Certain items may be available from stock. Inventory is periodically updated. All devices for chip and wire applications are 100% tested, visual inspected and shipped in waffle packs (WP). For high volume automated assembly, MIS chip capacitors are supplied as 4" wafers 100% tested, inked and diced on expanded film frame (FF).



US MICROWAVES Advanced Microwave Components		1W, 112GHz, BERYLLIUM OXIDE FULL WRAPAROUND POWER CHIP RESISTORS USM RP050025BO2W-1W-112GHz-LM01

FEATURES

APPLICATIONS

POWER CHIP RESISTOR

High power dissipation while working up to 112GHz range frequencies

Low insertion loss

High reliability and ruggedness

Small chip size with reduced stray capacitance per unit area.

Low temperature coefficient and wide operating temperature range.

Applications of Power chip resistors include microwave and RF high power terminations, resistive microwave power dividers, Wilkinson power dividers , power attenuators, microwave power amplifiers.

PRODUCT DESCRIPTION AND SHORT APPLICATION NOTE

USM RP050025BO2W-1W-112GHz-LM01 full wrap around power chip resistors are designed to be used in chip and wire hybrid circuits as microwave and RF power resistors, power terminations, Wilkinson power dividers, power attenuators, microwave power amplifiers, etc.Wrap around thin film power chip resistors and terminations have low temperature coefficients, low noise and increased long term stability compared to their thick film counterpart. In high power applications, temperature coefficient of resistance and long term stability have to be the best available.

TECHNOLOGY DESCRIPTION: SEMICONDUCTOR-THIN FILM MANUFACTURING

All thin film microwave products are manufactured using advanced semiconductors and thin film technologies including ultra-stable and self passivating Tantalum Nitride resistors, gold interconnect metallization and reliable MNOS capacitors to achieve excellent uniformity, performance and reliability. Thin film technology is the preferred solution for all applications that require low noise, long term stability and excellent performance at very high frequencies. US Microwaves employs proprietary thin film technologies for deposition of a wide range of resistive films with sheet resistance films from 1W/sq to 10,000W/sq. All US Microwaves products are available in die form and are ideal for high reliability hybrid and multi chip module applications.

ELECTRICAL CHARACTERISTICS
PARAMETER	VALUE	UNITS
Resistance range	10-100	W
Maxim Power	1.0	W
Maxim Capacitance	0.028	pF
3dB frequency (defined for 50 W resistance)	112	GHz
Temperature Coefficient -55C to 150C	100	ppm/deg C
Tolerances available	1	%
Operating Temperature range	-65 to 200	deg C
Working voltage (Vw)	SQR(P*R)	V
Peak voltage at 25C, 5 sec	1.5 x (Vw)	V
Insulation resistance at 25 C	10E9	W

ONLY Proper die handling equipment and procedures should be employed. Stresses beyond listed absolute maximum ratings may cause permanent damage to the device.

GENERAL DIE INFORMATION
Substrate	Thickness (mils)	Die size (mils)	Bonding pads	Backside metal
Beryllium Oxide	40±3	50 x 25±2	Top Pad size is Min [W-2]x20mils, X=25, 3µm thick, 99.99% electroplated gold with a TiW barrier.	Wrap around resistors available with soldable or weldable terminations.
All US Microwaves products are available in die form. Typical delivery for die products is 2-3 weeks ARO. For Custom designs, delivery is 3-4 weeks ARO. Certain items may be available from stock. Inventory is periodically updated. All devices for chip and wire applications are 100% tested, visual inspected and shipped in waffle packs (WP).

DIE LAYOUT - MECHANICAL SPECIFICATIONS

STANDARD PRODUCTS ORDERING INFORMATION

R [W]	R multiplier	TOLERANCE	max VOLTAGE [V]	max F @3dB [GHz]

Find part #

STANDARD PRODUCTS PRICE LIST
USM PART #	R(W)	MINIM ORDER QUANTITY	Waffle Packs	U/P($)
USM RP050025BO2W-1W-112GHz-50-1%-WP-LM01	50	238pc	-WP	$10.76
List prices are for standard products, available from stock. List prices for other quantities and tolerances are available on line through Instant Quote. For standard products available from stock, there is a minimum line item order. For custom products please inquire by contacting US Microwaves technical sales. No rights can be derived from pricing information provided on this website. Such information is indicative only, is showed for budgetary use only and subject to change by US MICROWAVES at any time and without notice.
Products sold for space, military or medical applications, element evaluation and/or level K or S qualification are subject to minimum order levels to be established on a case by case basis. For any special applications, die level KGD qualification requirements, different packaging or custom configurations, contact sales department.

ORDERING: Order on line at: http://www.usmicrowaves.com/porder.htm. A copy of the order along with an order confirmation receipt is issued instantly for all orders placed on line. On line Orders have to be verified, accepted and acknowledged by US Microwaves sales department in writing before, becoming non cancelable binding contracts.
DELIVERY: Typical delivery for die products packaged in waffle packs is 2-4 weeks ARO. For Custom designs, delivery is 3-5 weeks ARO. Certain items may be available from stock with delivery up to 1 week.
SHIPPING/PACKAGING: All devices for chip and wire applications are 100% tested, visual inspected and shipped in waffle packs (WP).
SAMPLES: Samples are available only for customers that have issued firm orders pending qualification of product in a particular application.

GUARANTEED SUPPLY! US Microwaves guarantees continuous supply and availability of all standard products provided minimum order quantities are met.

U.S. Microwaves has made every effort to have this information as accurate as possible. However, no responsibility is assumed by U.S. Microwaves for its use, nor for any infringements of rights of third parties which may result from its use. U.S. Microwaves reserves the right to revise the content or modify its product line without prior notice. U.S. Microwaves products are not authorized for and should not be used within support systems which are intended for surgical implants into the body, to support or sustain life, in aircraft, space equipment, submarine, or nuclear facility applications without the specific written consent of U.S. Microwaves.

Last updated: July 01, 2009
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