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SILICON THIN FILM CHIP RESISTORS |
| R2000-S5 |
| The R2000-S5 series of microwave thin film resistors is designed to be used in microwave hybrid circuits for biasing of active components. These devices can be used over the full military temperature range -55°C to +125°C. Quality and workmanship is per MIL-S-883. Level B. Devices are 100% tested, visual inspected and packaged in waffle packs. US Microwaves employs proprietary thin film technologies for deposition of a wide range of sheet resistance films from 1W/sq to 10.000W /sq. Resistors from 0.1W to x MW range are available. |  |
| R(W) | USM Part # | R(W) | USM Part # | R(W) | USM Part # | R(W) | USM Part # |
| 1.0 | R2000-S5-1P0 | 10 | R2000-S5-10P0 | 100 | R2000-S5-100P0 | 1000 | R2000-S5-1000 |
| 1.2 | R2000-S5-1P2 | 12 | R2000-S5-12P0 | 120 | R2000-S5-120P0 | 1200 | R2000-S5-1200 |
| 1.5 | R2000-S5-1P5 | 15 | R2000-S5-15P0 | 150 | R2000-S5-150P0 | 1500 | R2000-S5-1500 |
| 1.8 | R2000-S5-1P8 | 18 | R2000-S5-18P0 | 180 | R2000-S5-180P0 | 1800 | R2000-S5-1800 |
| 2.2 | R2000-S5-2P2 | 22 | R2000-S5-22P0 | 220 | R2000-S5-220P0 | 2200 | R2000-S5-2200 |
| 2.7 | R2000-S5-2P7 | 27 | R2000-S5-27P0 | 270 | R2000-S5-270P0 | 2700 | R2000-S5-2700 |
| 3.3 | R2000-S5-3P3 | 33 | R2000-S5-33P0 | 330 | R2000-S5-330P0 | 3300 | R2000-S5-3300 |
| 3.9 | R2000-S5-3P9 | 39 | R2000-S5-39P0 | 390 | R2000-S5-390P0 | 3900 | R2000-S5-3900 |
| 4.7 | R2000-S5-4P7 | 47 | R2000-S5-47P0 | 470 | R2000-S5-470P0 | 4700 | R2000-S5-4700 |
| 5.0 | R2000-S5-5P0 | 50 | R2000-S5-50P0 | 500 | R2000-S5-500P0 | 5000 | R2000-S5-5000 |
| 5.6 | R2000-S5-5P6 | 56 | R2000-S5-56P0 | 560 | R2000-S5-560P0 | 5600 | R2000-S5-5600 |
| 6.8 | R2000-S5-6P8 | 68 | R2000-S5-68P0 | 680 | R2000-S5-680P0 | 6800 | R2000-S5-6800 |
| 7.5 | R2000-S5-7P5 | 75 | R2000-S5-75P0 | 750 | R2000-S5-750P0 | 7500 | R2000-S5-7500 |
| 8.2 | R2000-S5-8P2 | 82 | R2000-S5-82P0 | 820 | R2000-S5-820P0 | 8200 | R2000-S5-8200 |
| SUBSTRATE INFORMATION | RESISTOR SPECIFICATIONS | ||||
| Material | Thickness (mils) | Die size (mils) | Power rating | Tolerances q% | Capacitance |
| SiO2/Silicon | 10 ±1 | (20±2)x(20±2) | 100mW@70°C | 1, 5, 10 | 1pF |
| PROCESS INFORMATION | ||
| Resistor | Conductor | Backside metallization |
| The resistive material is high stability Tantalum Nitride with low temperature coefficient of resistance, <75ppm/°C typical. For Rsq<10W/sq and Rsq>500W/sq, the resistive material is proprietary. | The bonding pads of the resistors are 3m thick, 99.99% electroplated gold with a TiW barrier that withstands 30 min at 400°C in air without loss of adhesion. | The backside of the die is metallized with TiW/Au which is compatible with most die attaching methods. Other metallizations are available upon special request. |
| ORDERING INFORMATION R2000-S5-xxPx-q % |
| TOLERANCE q | MINIMUM ORDER | U/P($) /1K | U/P($) /5K | U/P($) /10K | U/P($) /50K | U/P($) /100K | DELIVERY | ORDER |
| 10% | $320 / 200 pc | $0.92 | $0.83 | $0.74 | $0.69 | $0.46 | 2 weeks ARO for 5% and 10% tolerance and 3-4 weeks ARO for 1%. Certain items are available from Stock |  |
| 5% | $320 / 125 pc | $1.38 | $1.25 | $1.11 | $1.04 | $0.69 | ||
| 1% | $320 / 75 pc | $2.31 | $2.08 | $1.85 | $1.73 | $1.15 |
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U.S. Microwaves has made every effort to have this information as accurate as possible. However, no responsibility is assumed by U.S. Microwaves for its use, nor for any infringements of rights of third parties which may result from its use. U.S. MICROWAVES reserves the right to revise the content or modify its product line without prior notice. U.S. Microwaves products are not authorized for and should not be used within support systems which are intended for surgical implants into the body, to support or sustain life, in aircraft, space equipment, submarine, or nuclear facility applications without the specific written consent of U.S. Microwaves. |
| U.S. Microwaves 2968 Scott Blvd. Santa Clara, CA 95054-3322 Tel:(408)986-8026 |
| Fax:(408)986-8027 usm_sales@usmicrowaves.com |