2SC3356 RF TRANSISTORS manufacturer - USM 2SC3356 NPN SILICON RF TRANSISTOR For microwave low-noise amplification and oscillator applications US MICROWAVES

NPN SILICON RF TRANSISTOR USM 2SC3356 FEATURES Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz• High power gain : MAG = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz. APPLICATIONS For microwave low-noise amplification. PRODUCT DESCRIPTION AND SHORT APPLICATION NOTE The USM 2SC3356 series of NPN epitaxial silicon transistors, 3-PIN MNIMOLD, is designed for low cost amplifier and oscillator applications. Low noise figures, high gain, and high current capability equate to wide dynamic range and excellent linearity. The USM 2SC3356 series offers excellent performance and reliability at low cost. This is achieved by USM gold metallization system and their direct nitride passivated base surface process. The USM 2SC3356 series is available in die form for high frequency applications. It is also available in several low cost plastic package styles TO-92 and SOT 89. TECHNOLOGY DESCRIPTION: SEMICONDUCTOR-THIN FILM MANUFACTURING All thin film microwave products are manufactured using advanced semiconductors and thin film technologies including ultra-stable and self passivating Tantalum Nitride resistors, gold interconnect metallization and reliable MNOS capacitors to achieve excellent uniformity, performance and reliability. Thin film technology is the preferred solution for all applications that require low noise, long term stability and excellent performance at very high frequencies. US Microwaves employs proprietary thin film technologies for deposition of a wide range of resistive films with sheet resistance films from 1W/sq to 10,000W/sq. All US Microwaves products are available in die form and are ideal for high reliability hybrid and multi chip module applications. MAXIMUM RATINGS PARAMETER VALUE UNITS VCBO,Collector-base voltage,open emitter 20 V VCEO,collector-emitter voltage,open base 12 V VEBO,emitter-base voltage,open collector 3 v IC,collector current (DC) 100 mA Ptot,total power dissipation,Tamb = 25 °C, free air 200 mW Tj,junction temperature 150 °C Tstg,storage temperature -65 to +150 °C ONLY Proper die handling equipment and procedures should be employed. Stresses beyond listed absolute maximum ratings may cause permanent damage to the device. Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. ELECTRICAL CHARACTERISTICS (25°C unless otherwise specified) PARAMETER VALUE UNITS ICBO,collector cut-off current,IE = 0; VCB = 10 V max. 1.0 mA IEBO,emitter cut-off current,IC = 0; VEB = 1 V max. 1.0 mA hFE,DC current gain,IC = 20 mA; VCE = 10 V; Pulse measurement: PW =350 µs, Duty Cycle =2% min 50 typ. 120 max 250 fT,Gain Bandwidth Product,VCE = 10 V, IC = 20 mA typ. 7 GHz /S21e/2,Insertion Power Gain,VCE = 10 V, IC = 20 mA, f = 1 GHz typ.11.5 dB NF,Noise Figure,VCE = 10 V, IC = 7 mA, f = 1 GHz typ. 1.1 max 2.0 dB Cre, Reverse Transfer Capacitance, VCB = 10 V, IE = 0 mA, f = 1 MHz (Note 1) typ. 0.55 max 1 pF Note 1. Collector to base capacitance when the emitter grounded GENERAL DIE INFORMATION Substrate Silicon Thickness 6±0.5(mils) Die size 14 x 14±1 (mils) Bonding pads min 3 mils, 3µm thick, 99.99% electroplated gold with a TiW barrier Standard electrode metallization is Gold over Nickel compatible with epoxy, AuGe, AuSn die attaching and thermal compression or ultrasonic wire bonding. Gold over platinum is available on special request with custom designs. All US Microwaves products are available in die form. Typical delivery for die products is 2-3 weeks ARO. For Custom designs, delivery is 3-4 weeks ARO. Certain items may be available from stock. Inventory is periodically updated. All devices for chip and wire applications are 100% tested, visual inspected and shipped in waffle packs (WP). For high volume automated assembly, MIS chip capacitors are supplied as 4" wafers 100% tested, inked and diced on expanded film frame (FF). DIE LAYOUT - MECHANICAL SPECIFICATIONS STANDARD PRODUCTS ORDERING INFORMATION USM 2SC3356 -WP List prices are for standard products, available from stock. List prices for other quantities and tolerances are available on line through Instant Quote. For standard products available from stock, there is a minimum line item order. For custom products please inquire by contacting US Microwaves technical sales. No rights can be derived from pricing information provided on this website. Such information is indicative only, is showed for budgetary use only and subject to change by US MICROWAVES at any time and without notice. Products sold for space, military or medical applications, element evaluation and/or level K or S qualification are subject to minimum order levels to be established on a case by case basis. For any special applications, die level KGD qualification requirements, different packaging or custom configurations, contact sales department. ORDERING: Order on line at: http://www.usmicrowaves.com/porder.htm. A copy of the order along with an order confirmation receipt is issued instantly for all orders placed on line. On line Orders have to be verified, accepted and acknowledged by US Microwaves sales department in writing before, becoming non cancelable binding contracts. DELIVERY: Typical delivery for die products packaged in waffle packs is 2-4 weeks ARO. For Custom designs, delivery is 3-5 weeks ARO. Certain items may be available from stock with delivery up to 1 week. SHIPPING/PACKAGING: All devices for chip and wire applications are 100% tested, visual inspected and shipped in waffle packs (WP). For larger orders,>10k pc, devices can be shipped on film frame. For smaller quantities, it may vary. For high volume automated assembly, devices may be supplied as 4" wafers 100% tested, inked and diced on expanded film frame (FF). SAMPLES: Samples are available only for customers that have issued firm orders pending qualification of product in a particular application. GUARANTEED SUPPLY! US Microwaves guarantees continuous supply and availability of all standard products provided minimum order quantities are met. U.S. Microwaves has made every effort to have this information as accurate as possible. However, no responsibility is assumed by U.S. Microwaves for its use, nor for any infringements of rights of third parties which may result from its use. U.S. Microwaves reserves the right to revise the content or modify its product line without prior notice. U.S. Microwaves products are not authorized for and should not be used within support systems which are intended for surgical implants into the body, to support or sustain life, in aircraft, space equipment, submarine, or nuclear facility applications without the specific written consent of U.S. Microwaves.



US MICROWAVES		NPN SILICON RF TRANSISTOR
Advanced Microwave Components		2SC3356

FEATURES

APPLICATIONS

TRANSISTOR DICE

Low noise and high gain : NF=1.1dB TYP.,
Ga=11dB TYP. @VCE=10V, IC=7mA, f=1GHz
High power gain : MAG=13dB TYP. @VCE=10V, IC=20mA, f=1GHz.

For microwave low-noise amplification.

PRODUCT DESCRIPTION AND SHORT APPLICATION NOTE

The USM 2SC3356 series of NPN epitaxial silicon transistors, 3-PIN MNIMOLD, is designed for low cost amplifier and oscillator applications. Low noise figures, high gain, and high current capability equate to wide dynamic range and excellent linearity. The USM 2SC3356 series offers excellent performance and reliability at low cost. This is achieved by USM gold metallization system and their direct nitride passivated base surface process.
The USM 2SC3356 series is available in die form for high frequency applications. It is also available in several low cost plastic package styles TO-92 and SOT 89.

TECHNOLOGY DESCRIPTION: SEMICONDUCTOR-THIN FILM MANUFACTURING

All thin film microwave products are manufactured using advanced semiconductors and thin film technologies including ultra-stable and self passivating Tantalum Nitride resistors, gold interconnect metallization and reliable MNOS capacitors to achieve excellent uniformity, performance and reliability. Thin film technology is the preferred solution for all applications that require low noise, long term stability and excellent performance at very high frequencies. US Microwaves employs proprietary thin film technologies for deposition of a wide range of resistive films with sheet resistance films from 1Ω/sq to 10,000Ω/sq. All US Microwaves products are available in die form and are ideal for high reliability hybrid and multi chip module applications.
All US Microwaves products are manufactured using GOLD CHIP TECHNOLOGY™ a trade mark of Semiconix Corporation.

MAXIMUM RATINGS
PARAMETER	VALUE	UNITS
V_CBO,Collector-base voltage,open emitter	20	V
V_CEO,collector-emitter voltage,open base	12	V
V_EBO,emitter-base voltage,open collector	3	v
I_C,collector current (DC)	100	mA
P_tot,total power dissipation,Tamb = 25 °C, free air	200	mW
Tj,junction temperature	150	°C
T_stg,storage temperature	-65 to +150	°C
ONLY Proper die handling equipment and procedures should be employed. Stresses beyond listed absolute maximum ratings may cause permanent damage to the device. Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

ELECTRICAL CHARACTERISTICS (25°C unless otherwise specified)
PARAMETER	VALUE	UNITS
I_CBO,collector cut-off current,I_E = 0; V_CB = 10 V	max. 1.0	mA
I_EBO,emitter cut-off current,I_C = 0; V_EB = 1 V	max. 1.0	mA
h_FE,DC current gain,I_C = 20 mA; V_CE = 10 V; Pulse measurement: PW =350 µs, Duty Cycle =2%	min 50 typ. 120 max 250
f_T,Gain Bandwidth Product,V_CE = 10 V, I_C = 20 mA	typ. 7	GHz
/S21e/²,Insertion Power Gain,V_CE = 10 V, I_C = 20 mA, f = 1 GHz	typ.11.5	dB
NF,Noise Figure,V_CE = 10 V, I_C = 7 mA, f = 1 GHz	typ. 1.1 max 2.0	dB
Cre, Reverse Transfer Capacitance, V_CB = 10 V, I_E = 0 mA, f = 1 MHz (Note 1)	typ. 0.55 max 1	pF
Note 1. Collector to base capacitance when the emitter grounded

GENERAL DIE INFORMATION
Substrate	Thickness [mils]	Die Size [mils]	Bonding Pads	Backside metal
Silicon	6±0.5	14 x 14±1	min 3 mils, 3µm thick, 99.99% electroplated gold with a TiW barrier	Standard electrode metallization is Gold over Nickel compatible with epoxy, AuGe, AuSn die attaching and thermal compression or ultrasonic wire bonding. Gold over platinum is available on special request with custom designs.
All US Microwaves products are available in die form. Typical delivery for die products is 2-3 weeks ARO. For Custom designs, delivery is 3-4 weeks ARO. Certain items may be available from stock. Inventory is periodically updated. All devices for chip and wire applications are 100% tested, visual inspected and shipped in waffle packs (WP). For high volume automated assembly, MIS chip capacitors are supplied as 4" wafers 100% tested, inked and diced on expanded film frame (FF).

DIE LAYOUT

STANDARD PRODUCTS ORDERING INFORMATION

STANDARD PRODUCTS PRICE LIST
USM PART #	Waffle Packs	MINIMUM ORDER QUANTITY	U/P($)
USM 2SC3356	-WP	100pc	$
List prices are for standard products, available from stock. List prices for other quantities and tolerances are available on line through Instant Quote. For standard products available from stock, there is a minimum line item order. For custom products please inquire by contacting US Microwaves technical sales. No rights can be derived from pricing information provided on this website. Such information is indicative only, is showed for budgetary use only and subject to change by US MICROWAVES at any time and without notice.
Products sold for space, military or medical applications, element evaluation and/or level K or S qualification are subject to minimum order levels to be established on a case by case basis. For any special applications, die level KGD qualification requirements, different packaging or custom configurations, contact sales department.

ORDERING: Order on line at: http://www.usmicrowaves.com/porder.htm. A copy of the order along with an order confirmation receipt is issued instantly for all orders placed on line. On line Orders have to be verified, accepted and acknowledged by US Microwaves sales department in writing before, becoming non cancelable binding contracts.
DELIVERY: Typical delivery for die products packaged in waffle packs is 2-4 weeks ARO. For Custom designs, delivery is 3-5 weeks ARO. Certain items may be available from stock with delivery up to 1 week.
SHIPPING/PACKAGING: All devices for chip and wire applications are 100% tested, visual inspected and shipped in waffle packs (WP). For larger orders,>10k pc, devices can be shipped on film frame. For smaller quantities, it may vary. For high volume automated assembly, devices may be supplied as 4" wafers 100% tested, inked and diced on expanded film frame (FF).
SAMPLES: Samples are available only for customers that have issued firm orders pending qualification of product in a particular application.

GUARANTEED SUPPLY! US Microwaves guarantees continuous supply and availability of all standard products provided minimum order quantities are met.

U.S. Microwaves has made every effort to have this information as accurate as possible. However, no responsibility is assumed by U.S. Microwaves for its use, nor for any infringements of rights of third parties which may result from its use. U.S. Microwaves reserves the right to revise the content or modify its product line without prior notice. U.S. Microwaves products are not authorized for and should not be used within support systems which are intended for surgical implants into the body, to support or sustain life, in aircraft, space equipment, submarine, or nuclear facility applications without the specific written consent of U.S. Microwaves.

Last updated: July 01, 2009
US MICROWAVES \| Tel:408-758-8690 Fax: 408-986-8027 \| USMICROWAVES

INSTANT QUOTE
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