LXT2500Q20-XXX - MULTI TAP 1/4 TURN TUNING SPIRAL CHIP INDUCTORS LXT2500Q20-L01-01nH - 1nH, 1 turn, 25x25 mils, MULTITAP 1/4 TURN HIGH Q FACTOR SPIRAL INDUCTORS LXT2500Q20-L02-02nH - 2nH, 2 turn, 25x25 mils, MULTITAP 1/4 TURN HIGH Q FACTOR SPIRAL INDUCTORS LXT2500Q20-L03-04nH - 4nH, 3 turn, 25x25 mils, MULTITAP 1/4 TURN HIGH Q FACTOR SPIRAL INDUCTORS LXT2500Q20-L04-08nH - 8nH, 4 turn, 25x25 mils, MULTITAP 1/4 TURN HIGH Q FACTOR SPIRAL INDUCTORS LXT2500Q20-L05-14nH - 14nH, 5 turn, 25x25 mils, MULTITAP 1/4 TURN HIGH Q FACTOR SPIRAL INDUCTORS LXT2500Q20-L06-21nH - 21nH, 6 turn, 25x25 mils, MULTITAP 1/4 TURN HIGH Q FACTOR SPIRAL INDUCTORS LXT2500Q20-L07-31nH - 30.6nH, 7 turn, 25x25 mils, MULTITAP 1/4 TURN HIGH Q FACTOR SPIRAL INDUCTORS LXT2500Q20-L08-40nH - 40nH, 8 turn, 25x25 mils, MULTITAP 1/4 TURN HIGH Q FACTOR SPIRAL INDUCTORS Spiral chip inductors are available in 3 different die dimensions: - For 1 turn to 21 turns series the die size is 0.050"x0.050"x0.020". - For 1 turn to 12 turns the die size is 0.030"x0.030"x0.020". - For 1 turn to 8 turns the die size is 0.025"x0.025"x0.020". Spiral chip inductors are manufactured on quartz (SiO2), 20 mils thick, for lowest capacitance and highest SRF and PRF. The LXT2500Q20-L01-01nH spiral chip inductors are manufactured on quartz (SiO2), 20 mils thick. These devices can be used over the full military temperature range -55C to +125C. Quality and workmanship is per MIL-S-883. Devices are 100% tested, visual inspected and packaged in waffle packs.Spiral Chip Inductors Lab kits are available from stock: L-Kit The LXT2500Q20-L01-01nH Series of spiral chip inductors are designed to be used in chip and wire hybrid circuits as RF choke in power supplies and microwave circuit resonant elements. When used as chokes, a modest Q is desirable while in oscillators Q has to be as high as possible. U.S. Microwaves advanced thin film technologies allow for an important reduction of the DCR max, which translates into an increased Q. For spirals with w+s=25m, Q values between 25 and 30 are obtained which represent a better compromise between the two applications. For lowest capacitance and higher self resonance, the LXT2500Q20-L01-01nH spiral chip inductors are manufactured on 20 mil thick quartz (SiO2) substrates. Application notes AN 102, AN 112 and AN 113 are describing assembly methods for best performance. Manufactured with 99.9% pure gold, the spiral inductor chip does not need any protection and can operate even in hostile environments. Designed and manufactured by US Microwaves in 1990 for military and industrial applications, the spiral chip inductors now can find their place in optoelectronic and wireless consumer products as well. US MICROWAVES, manufacturer of high reliability microwave integrated circuits  MIC technology. US Microwave offers a multitude of applied thin film products and microwave semiconductor devices: manufactures and supplies high quality standard microwave thin film circuits and microwave devices using advanced technical ceramics and semiconductor materials; Products include RF micro devices  for hybrid chip and wire applications; microwave thin film circuits, custom manufacturing from customer's data, MULTITAP 1/4 TURN TUNING INDUCTORs - ceramic, sapphire and quartz substrate, thin film resistors - ceramic, silicon and quartz substrates, multi-tap thin film resistors - ceramic and silicon substrates, capacitors MIS for chip and wire applications, MNOS capacitors, MOS capacitors, ceramic capacitors, Schottky diodes, PIN diodes, tunnel diodes, SRD diodes, varactor diodes and zero bias diodes, RF NPN and PNP transistors, high speed LDMOS and T MOSFET s, MMIC - RF IC s silicon and SiGe.SEMICONIX Designs and manufactures standard and custom bipolar and MOS analog devices, semiconductors, analog integrated circuits, discrete components for high performance systems such as cellular/wireless, video amplifiers, heart pacemakers and medical imaging systems. Standard semiconductor components are designed and manufactured for space, medical, telecommunications and military applications only. Company's technology road map is including SiGe epi devices for high speed RF bipolars and high speed fiber optic and optoelectronic applications. Analog devices, ASIC analog design and manufacturing: Semiconix produces a series of semi-custom bipolar analog devices in arrays that are customized by designing a specific metal interconnection mask. The arrays contain a large number of undedicated active and passive components, i.e. transistors, diodes, resistors, capacitors, MOSFET s, LDMOS, photodiodes, phototransistors, etc. Since wafers are stocked before the metal mask, the custom IC development phase is shorter and far less expensive compared to conventional full custom ICs. Customers may provide own analog design. Optoelectronic components: photodiodes, photodiodes arrays, phototransistors, position sensing devices, optocouplers, optoisolators, photodarlington, high voltage phototransistors output, Schottky infrared detectors. Discrete semiconductors: Schottky diodes, Zenner diodes, TVS, small signal bipolar transistors, high voltage bipolar transistors, matched pair bipolar transistors, small signal JFET s and MOSFET s, MCT (MOS controlled tyristors), IGBT. Semiconix 's Divisions: HTE Labs Provides Wafer Foundry, R&D support and Specialty Wafer Fab Processing to customers from semiconductors and microelectronics industry. Wafer foundry includes the following processes: 20V, 45V, 75V, 25V super-beta and high voltage dielectric isolated bipolar process. R&D support is provided in the following fields of microelectronics: thin film active and passive components technologies, flip chip technology (TiW/Cu/Cu/SnPb), sensor technologies (inertial, pressure, temperature, gas and smoke detectors), optoelectronic technologies and components, discrete and integrated circuits technology development for special applications, LiNbO3 applications like SAW, Ti diffused, light wave guides and Mach-Zender light modulators. Specialty wafer fab processing: epitaxy, SiGe, epi, diffusion and oxidation, ion implant, LPCVD and PECVD Si3N4, SiO2, platinum silicidation, photo-lithography, plasma etching, silicon micro-machining by KOH anisotropic etch, sputter depositions of Ti/Ni/Ag lift off process, Ti/Pt/Au lift off process, sputter depositions of thin film resistors : SiCr, NiCr, TaN2, silicon wafers back grind and polish followed by trimetal backside sputter depositions, gold backside sputter depositions and alloy : gold electroplating and gold bump. SEMICONWELL designs and manufacture standard and custom Integrated Passive Networks - IPN for the personal computer, telecommunications, industrial controls, automotive, avionics. The Integrated Passive Networks are a sum of resistors, capacitors, inductors, diodes and schottky diodes and are available in through holle and surface mounted packages. SEMICONWELL is suppling integrated termination, filters and ESD protection for use in mobile phones, PDAs, personal computers, notebooks, routers, hubs, internet appliances. Standard Devices - Most standard devices include resistors, capacitors, inductors, diodes and schottky diodes networks and are inventoried by the designated part numbers and can be ordered on line, from factory or from distributors. Custom Devices - Custom IPN (Integrated Passive Networks) are manufactured from customer's prints upon request. US MICROWAVES develops, manufactures and supplies high quality standard microwave thin film circuits and microwave devices including RF bipolars for hybrid chip and wire applications as follows: microwave thin film circuits, custom manufacturing from customer's data, MULTITAP 1/4 TURN TUNING INDUCTORs - ceramic, sapphire and quartz substrate, thin film resistors - ceramic, silicon and quartz substrates, multi-tap thin film resistors - ceramic and silicon substrates, capacitors MIS for chip and wire applications, MNOS capacitors, MOS capacitors, ceramic capacitors, Schottky, PIN, tunnel, SRD, varactor and zero bias diodes, RF NPN and PNP transistors, high speed LDMOS and T MOSFET s, MMIC - RF IC s silicon and SiGe.

 


US MICROWAVES
Advanced Microwave Components
LXT2500Q20-XXX - MULTI TAP 1/4 TURN TUNING SPIRAL CHIP INDUCTORS
 
LXT2500Q20-L01-01nH - 1nH, 1 turn, 25x25 mils, MULTITAP 1/4 TURN HIGH Q FACTOR SPIRAL INDUCTORS
LXT2500Q20-L02-02nH - 2nH, 2 turn, 25x25 mils, MULTITAP 1/4 TURN HIGH Q FACTOR SPIRAL INDUCTORS
LXT2500Q20-L03-04nH - 4nH, 3 turn, 25x25 mils, MULTITAP 1/4 TURN HIGH Q FACTOR SPIRAL INDUCTORS
LXT2500Q20-L04-08nH - 8nH, 4 turn, 25x25 mils, MULTITAP 1/4 TURN HIGH Q FACTOR SPIRAL INDUCTORS
LXT2500Q20-L05-14nH - 14nH, 5 turn, 25x25 mils, MULTITAP 1/4 TURN HIGH Q FACTOR SPIRAL INDUCTORS
LXT2500Q20-L06-21nH - 21nH, 6 turn, 25x25 mils, MULTITAP 1/4 TURN HIGH Q FACTOR SPIRAL INDUCTORS
LXT2500Q20-L07-31nH - 30.6nH, 7 turn, 25x25 mils, MULTITAP 1/4 TURN HIGH Q FACTOR SPIRAL INDUCTORS
LXT2500Q20-L08-40nH - 40nH, 8 turn, 25x25 mils, MULTITAP 1/4 TURN HIGH Q FACTOR SPIRAL INDUCTORS
 
 
   
 
Spiral chip inductors are available in 3 different die dimensions:
- For 1 turn to 21 turns series the die size is 0.050"x0.050"x0.020".
- For 1 turn to 12 turns the die size is 0.030"x0.030"x0.020".
- For 1 turn to 8 turns the die size is 0.025"x0.025"x0.020".
Spiral chip inductors are manufactured on quartz (SiO2), 20 mils thick, for lowest capacitance and highest SRF and PRF. The LXT2500Q20-L01-01nH spiral chip inductors are manufactured on quartz (SiO2), 20 mils thick.
These devices can be used over the full military temperature range -55C to +125C. Quality and workmanship is per MIL-S-883. Devices are 100% tested, visual inspected and packaged in waffle packs.

Spiral Chip Inductors Lab kits are available from stock: L-Kit
The LXT2500Q20-L01-01nH Series of spiral chip inductors are designed to be used in chip and wire hybrid circuits as RF choke in power supplies and microwave circuit resonant elements. When used as chokes, a modest Q is desirable while in oscillators Q has to be as high as possible. U.S. Microwaves advanced thin film technologies allow for an important reduction of the DCR max, which translates into an increased Q. For spirals with w+s=25µm, Q values between 25 and 30 are obtained which represent a better compromise between the two applications. For lowest capacitance and higher self resonance, the LXT2500Q20-L01-01nH spiral chip inductors are manufactured on 20 mil thick quartz (SiO2) substrates. Application notes AN 102, AN 112 and AN 113 are describing assembly methods for best performance.
Manufactured with 99.9% pure gold, the spiral inductor chip does not need any protection and can operate even in hostile environments.
Designed and manufactured by US Microwaves in 1990 for military and industrial applications, the spiral chip inductors now can find their place in optoelectronic and wireless consumer products as well.

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