SILICON THIN FILM CHIP RESISTORS - SINGLE VALUE & MULTI TAP SILICON SUBSTRATE CHIP RESISTOR, The R2000-Sx series of microwave thin film resistors is designed to be used in microwave hybrid circuits for biasing of active components. These devices can be used over the full military temperature range -55°C to +125°C. Quality and workmanship is per MIL-S-883. Level B. Devices are 100% tested, visual inspected and packaged in waffle packs. US Microwaves employs proprietary thin film technologies for deposition of a wide range of sheet resistance films from 1W/sq to 10.000W /sq. Resistors from 0.1W to x MW range are available The resistive material is high stability Tantalum Nitride with low temperature coefficient of resistance, <75ppm/°C typical. For Rsq<10W/sq and Rsq>500W/sq, the resistive material is proprietary. The bonding pads of the resistors are 3m thick, 99.99% electroplated gold with a TiW barrier that withstands 30 min at 400°C in air without loss of adhesion. The backside of the die is metallized with TiW/Au which is compatible with most die attaching methods. Other metallizations are available upon special request. US MICROWAVES, manufacturer of high reliability microwave integrated circuits  MIC technology. US Microwave offers a multitude of applied thin film products and microwave semiconductor devices: manufactures and supplies high quality standard microwave thin film circuits and microwave devices using advanced technical ceramics and semiconductor materials; Products include RF micro devices  for hybrid chip and wire applications; microwave thin film circuits, custom manufacturing from customer's data, spiral chip inductors - ceramic, sapphire and quartz substrate, thin film resistors - ceramic, silicon and quartz substrates, multi-tap thin film resistors - ceramic and silicon substrates, capacitors MIS for chip and wire applications, MNOS capacitors, MOS capacitors, ceramic capacitors, Schottky diodes, PIN diodes, tunnel diodes, SRD diodes, varactor diodes and zero bias diodes, RF NPN and PNP transistors, high speed LDMOS and T MOSFET s, MMIC - RF IC s silicon and SiGe.SEMICONIX Designs and manufactures standard and custom bipolar and MOS analog devices, semiconductors, analog integrated circuits, discrete components for high performance systems such as cellular/wireless, video amplifiers, heart pacemakers and medical imaging systems. Standard semiconductor components are designed and manufactured for space, medical, telecommunications and military applications only. Company's technology road map is including SiGe epi devices for high speed RF bipolars and high speed fiber optic and optoelectronic applications. Analog devices, ASIC analog design and manufacturing: Semiconix produces a series of semi-custom bipolar analog devices in arrays that are customized by designing a specific metal interconnection mask. The arrays contain a large number of undedicated active and passive components, i.e. transistors, diodes, resistors, capacitors, MOSFET s, LDMOS, photodiodes, phototransistors, etc. Since wafers are stocked before the metal mask, the custom IC development phase is shorter and far less expensive compared to conventional full custom ICs. Customers may provide own analog design. Optoelectronic components: photodiodes, photodiodes arrays, phototransistors, position sensing devices, optocouplers, optoisolators, photodarlington, high voltage phototransistors output, Schottky infrared detectors. Discrete semiconductors: Schottky diodes, Zenner diodes, TVS, small signal bipolar transistors, high voltage bipolar transistors, matched pair bipolar transistors, small signal JFET s and MOSFET s, MCT (MOS controlled tyristors), IGBT. Semiconix 's Divisions: HTE Labs Provides Wafer Foundry, R&D support and Specialty Wafer Fab Processing to customers from semiconductors and microelectronics industry. Wafer foundry includes the following processes: 20V, 45V, 75V, 25V super-beta and high voltage dielectric isolated bipolar process. R&D support is provided in the following fields of microelectronics: thin film active and passive components technologies, flip chip technology (TiW/Cu/Cu/SnPb), sensor technologies (inertial, pressure, temperature, gas and smoke detectors), optoelectronic technologies and components, discrete and integrated circuits technology development for special applications, LiNbO3 applications like SAW, Ti diffused, light wave guides and Mach-Zender light modulators. Specialty wafer fab processing: epitaxy, SiGe, epi, diffusion and oxidation, ion implant, LPCVD and PECVD Si3N4, SiO2, platinum silicidation, photo-lithography, plasma etching, silicon micro-machining by KOH anisotropic etch, sputter depositions of Ti/Ni/Ag lift off process, Ti/Pt/Au lift off process, sputter depositions of thin film resistors : SiCr, NiCr, TaN2, silicon wafers back grind and polish followed by trimetal backside sputter depositions, gold backside sputter depositions and alloy : gold electroplating and gold bump. US MICROWAVES designs and manufacture standard and custom Integrated Passive Networks - IPN for the personal computer, telecommunications, industrial controls, automotive, avionics. The Integrated Passive Networks are a sum of resistors, capacitors, inductors, diodes and schottky diodes and are available in through holle and surface mounted packages. US MICROWAVES is suppling integrated termination, filters and ESD protection for use in mobile phones, PDAs, personal computers, notebooks, routers, hubs, internet appliances. Standard Devices - Most standard devices include resistors, capacitors, inductors, diodes and schottky diodes networks and are inventoried by the designated part numbers and can be ordered on line, from factory or from distributors. Custom Devices - Custom IPN (Integrated Passive Networks) are manufactured from customer's prints upon request. US MICROWAVES develops, manufactures and supplies high quality standard microwave thin film circuits and microwave devices including RF bipolars for hybrid chip and wire applications as follows: microwave thin film circuits, custom manufacturing from customer's data, spiral chip inductors - ceramic, sapphire and quartz substrate, thin film resistors - ceramic, silicon and quartz substrates, multi-tap thin film resistors - ceramic and silicon substrates, capacitors MIS for chip and wire applications, MNOS capacitors, MOS capacitors, ceramic capacitors, Schottky, PIN, tunnel, SRD, varactor and zero bias diodes, RF NPN and PNP transistors, high speed LDMOS and T MOSFET s, MMIC - RF IC s silicon and SiGe.m .ha

 


US MICROWAVES
Advanced Microwave Components
US MICROWAVES THIN FILM PRODUCTS AVAILABLE IN DIE FORM FOR HYBRID CIRCUIT APPLICATIONS
RBRXX-30BD 29 SILICON THIN FILM CHIP BUSSED RESISTORS RSTC3000 TOP CONTACT SILICON RESISTOR<10 M ohm
RS2RI3000 ISOLATED DUAL SILICON RESISTOR RSTC3600 TOP CONTACT SILICON RESISTOR<20 M ohm
RS8RB60908 BUSSED THIN FILM RESISTOR NETWORK RSTC4000 TOP CONTACT SILICON RESISTOR<20 M ohm
RS8RI60908 ISOLATED THIN FILM RESISTOR NETWORK MTR110 19 TAPS, MULTI-TAP SILICON CHIP RESISTOR
RSBC1500 BACK CONTACT SILICON SINGLE RESISTOR MTR210 11 TAPS, MULTI-TAP SILICON CHIP RESISTOR
RSBC2000 BACK CONTACT SILICON SINGLE RESISTOR BCCXXXX MOS MIS SILICON BINARY CHIP CAPACITORS
RSBC2R3000 BACK CONTACT SILICON DUAL RESISTOR BCCTXXXX MOS MIS TOP CONTACT BINARY CAPACITORS
RSCT2000 CENTER TAPPED SILICON DUAL RESISTOR USMCXXXX MOS MIS SILICON CHIP CAPACITORS
RSCT3000 CENTER TAPPED SILICON DUAL RESISTOR BCCCTXXXX MOS MIS SILICON TOP CONTACT CAPACITORS
RSCT4500 CENTER TAPPED DUAL RESISTOR<50 M ohm USM-KXXX CERAMIC SINGLE LAYER CHIP CAPACITORS
RSCT6000 CENTER TAPPED DUAL RESISTOR<100 M ohm LXXXX HIGH Q SPIRAL CHIP INDUCTORS
RSTC2000 TOP CONTACT SILICON RESISTOR<1 M ohm PTC PLATINUM Positive Temperature Coefficient Thermistors
 
 
   
 
US MICROWAVES thin film silicon products series are designed to be used for both surface mount applications as well as chip and wire thin film or thick film hybrid circuits from DC to microwave frequencies. Thin film products chips are manufactured on silicon substrate and designed to satisfy the requirements of prototype development and circuit trimming in hybrid packages through selective wire-bonding. The silicon chip products, can be used to build circuits for applications as low noise instrumentation amplifiers, temperature measurements, sensors circuits, etc. These devices can be used over the full military temperature range -55°C to +125°C. Quality and workmanship is per MIL-S-883. Devices are 100% tested, visual inspected and packaged in waffle packs

HOME PRODUCT TREE Last updated: June 30, 2009

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